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High Volume Production Growth of GaAs on Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

Chris R. Ito ,
M. Feng ,
V. K. Eu  and
H. B. Kim
Chris R. Ito
Affiliation:
Ford Microelectronics, Inc., 10340 State Highway 83, Colorado Springs, Colorado 80908
M. Feng
Affiliation:
Ford Microelectronics, Inc., 10340 State Highway 83, Colorado Springs, Colorado 80908
V. K. Eu
Affiliation:
Ford Microelectronics, Inc., 10340 State Highway 83, Colorado Springs, Colorado 80908
H. B. Kim
Affiliation:
Ford Microelectronics, Inc., 10340 State Highway 83, Colorado Springs, Colorado 80908
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Abstract

A high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 197
Copyright
Copyright © Materials Research Society 1986

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