Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-29T05:17:29.240Z Has data issue: false hasContentIssue false
  • English
  • Français

High Temperature Ohmie Contacts for N-Tvpe Β-Sic Sensors

Published online by Cambridge University Press:  25 February 2011

J. S. Sho ,
R. A. Weber ,
L. G. Provost ,
D. Goldstein  and
A. D. Kurtz
J. S. Sho
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
R. A. Weber
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
L. G. Provost
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
D. Goldstein
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
A. D. Kurtz
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
Get access

Abstract

In order to fabricate high temperature sensors and other devices, it is necessary to develop ohmic contact metallizations that can withstand elevated temperatures. A variety of ohmic contact metallizations were investigated with contact resistivity measured as a function of anneal time in air. The metallizations were based on Ti and W ohmic contacts, which have contact resistivities as low as 10-4 Ω-cm2. Several of the contact metallizations were stable after 10 hrs. at 650°C, while one system, based on a Ti ohmic contact, was able to withstand > 20 hrs. at 650°C with only a 30–40% increase in contact resistivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 573
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Powell, J. A., Matus, L. G., and Kuczmarski, M. A.: J. Electrochem. Soc. 134, 1558 (1987).Google Scholar
2. Carter, C. H., Tang, L., and Davis, R. F., presented at the Fourth National Review Meeting on the Growth and Characterization of SiC, Raleigh, NC, 1987.Google Scholar
3. Matus, L. G., Powell, J. A., Salupo, C. S.: Appl. Phys. Lett. 59, 1770 (1991)CrossRefGoogle Scholar
4. “SiC 1973” edited by Marshall, R. C., Faust, J. W. and Ryan, C. E.. Univ. of S. Carolina Press, p. 666.Google Scholar
5. Shor, J. S., Goldstein, D. and Kurtz, A. D., in “Amorphous and Crystalline SiC III, to be published by Springer-Verlag.Google Scholar
6. Shor, J. S., Goldstein, D., and Kurtz, A. D. in “Transducers 91' Digest of Technical Papers” p. 912–916 (IEEE press, 1991).Google Scholar
7. Shor, J. S., Zhang, X. G. and Osgood, R. M.: to be published in J. Electrochem. Soc.Google Scholar
8. Shor, J. S., Kurtz, A. D. and Osgood, R. M.: to be published in Appl. Phys. Lett.Google Scholar
9. Kulite Semiconductor Products, Inc. Leonia, NJ.Google Scholar
10. Edmond, J. A., Ryu, J., Glass, J. T. and Davis, R. F.: J. Electrochem. Soc. 135, 359 (1988).Google Scholar
11. Bellina, J. J. and Zeller, M. V.: Mat. Res. Soc. Symp. 97, 265 (1987)Google Scholar
12. Geib, K. M., Wilson, C., Long, R. G., and Wilmsen, C. W.: J. Appl. Phys. 68, 2796 (1990)Google Scholar
13. McMullin, P. G., Spitznagel, J. A., Szedon, J. R. and Costello, J. A., to be published in“Amorphous and Crystalline SiC III” Springer-Verlag Press.Google Scholar
14. Terry, L. E. and Wilson, R. W.: Proc. IEEE 57, 1580 (1969).CrossRefGoogle Scholar
15. Kuphal, E.: Solid State Electron. 24, 69 (1981).Google Scholar