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High Temperature Hardness of Bulk Single Crystal GaN

Published online by Cambridge University Press:  03 September 2012

I. Yonenaga ,
T. Hoshi  and
A. Usui
I. Yonenaga
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
T. Hoshi
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
A. Usui
Affiliation:
Opto-electronics and High Frequency Device Research Laboratories, NEC Corporation, Tsukuba 305-8501, Japan
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Abstract

The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.90
Copyright
Copyright © Materials Research Society 1999

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