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High Temperature Dielectric Properties of Sol-Gel Derived Thick PZT thin Films with Different Zr/Ti Atom Ratios

Published online by Cambridge University Press:  17 March 2011

Jinrong Cheng ,
Wenyi Zhu ,
Nan Li  and
L.Eric Cross
Jinrong Cheng
Affiliation:
Material Research Laboratory, The Pennsylvania State University University Park, PA 16802
Wenyi Zhu
Affiliation:
Material Research Laboratory, The Pennsylvania State University University Park, PA 16802
Nan Li
Affiliation:
Material Research Laboratory, The Pennsylvania State University University Park, PA 16802
L.Eric Cross
Affiliation:
Material Research Laboratory, The Pennsylvania State University University Park, PA 16802
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Abstract

PZT thin films of different thicknesses and Zr/Ti ratios of 60/40, 52/48 and 45/55 were coated onto platinized silicon substrates by using 2 methoxyethanol (2-MOE) based sol-gel spinon technique and crystallized with a rapid thermal annealing (RTA) process. XRD analysis revealed that thin PZT films exhibit random texture, while the thicker ones exhibit (100) texture, which was independent of composition. Dielectric constants and dissipation factors of PZT thin films were measured at elevated temperatures and as a function of frequency. For films with a thickness of ∼ 4 μm, the Curie points are at 350, 375 and 422°C for Zr/Ti ratios of 60/40, 52/48 and 45/55, respectively. All these films exhibit a high remnant polarization. A remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a composition close to MPB. The higher dielectric constant observed in films with the highest Zr content was explained by the concept of domain engineering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C7.4.1
Copyright
Copyright © Materials Research Society 2002

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