Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-22T22:21:15.067Z Has data issue: false hasContentIssue false
  • English
  • Français

A High Speed High Resolution Contact Line Imager Using Amorphous Silicon Alloy Pin Diodes

Published online by Cambridge University Press:  26 February 2011

L. Swartz ,
K. Kitamura ,
M. Vijan ,
J. McGill ,
V. Cannella  and
Z. Yaniv
L. Swartz
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
K. Kitamura
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
M. Vijan
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
J. McGill
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
V. Cannella
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
Z. Yaniv
Affiliation:
Ovonic Display Systems, Inc., A Division of Energy Conversion Devices, Inc. Troy, Michigan 48084
Get access

Abstract

We report the development of a very high speed high resolution contact line imager using amorphous silicon alloy PIN diodes both as photosensing elements and as isolation diodes in the multiplexing scheme. High speed is achieved by reading the integrated photocurrent in 8μsec and using current integration times less than Imsec. For 200 dots/inch, the scan speed at an illumination of 5×10−4W/cm2 is over 1000 lines/sec. This allows the reading of an A4 (8½″×11″) page in less than 2.0 sec. At this light level, the signal to noise ratio is greater than 40dB. The photosensor array can be used in the true direct contact mode and the multiplexed addressing scheme gives a substantial reduction in the number of peripheral IC chips necessary for operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 633
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ovshinsky, S. R. and Adler, D., MRS Symp. Proc., 49, 251 (1985).Google Scholar
2. Yaniv, Z., Cannella, V., Lien, A., McGill, J., den Boei, W. Proc. SPIE Vol.617, Amorphous Semiconductors for Microelectronics (1986), pp. 16–24.Google Scholar
3. Sasano, A., Yamamoto, H., Seki, K., Tanaka, Y., Bagi, T., Tanaka, T., Matsumaru, H., Tsukada, T., Extended Abstracts, 16th International Conference on Solid State Devices and Materials, Kobe, 1984, page 555–558.Google Scholar
4. Morozumi, S., Kurihara, H., Ohshima, H., Takeshita, T., Hasegawa, K., Extended Abstracts, 16th International Conference on Solid State Devices and Materials, Kobe, 1984,pp. 559–562.Google Scholar
5. McGill, J., Cannella, V., Yaniv, Z., Day, P., and Vijan, M., to be published in Materials Issues in Amorphous Semiconductors Technology, MRS Symp. Proc., 70 (1986).Google Scholar