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High Spatial Resolution Tem Study of Thin Film Metal/6H-Sic Interfaces

Published online by Cambridge University Press:  25 February 2011

J. S. Bow ,
L. M. Porter ,
M. J. Kim ,
R. W. Carpenter  and
R. F. Davis
J. S. Bow
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
L. M. Porter
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
M. J. Kim
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
R. W. Carpenter
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695–7907
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Abstract

Thin films of titanium, platinum, and hafnium were deposited on single crystal n-type, (0001) 6H-SiC at room temperature in UHV. Microstructure and chemistry of their interfaces were analyzed by high spatial resolution TEM imaging and spectroscopy. Ti5Si3 and TiC were the two phases found in the reaction zone of Ti/SiC specimens annealed at 700°C. A carbon-containing amorphous layer formed between Pt and SiC when the annealing temperature went up to 750°C. There was no apparent reaction zone in Hf/SiC specimens annealed at 700°C for 60 min‥ The change of electrical properties of metal/6H-SiC devices was attributed to these new product phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 571
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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