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A High Schottky Barrier Contact of Metallic Amorphous Si-P on P-Type Si

Published online by Cambridge University Press:  26 February 2011

T. Ogino ,
M. Sakaue  and
Y. Amemiya
T. Ogino
Affiliation:
NTT Atsugi Electrical Communications Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanaawa 243–01, Japan.
M. Sakaue
Affiliation:
NTT Atsugi Electrical Communications Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanaawa 243–01, Japan.
Y. Amemiya
Affiliation:
NTT Atsugi Electrical Communications Laboratories, Morinosato Wakamiya, Atsugi-shi, Kanaawa 243–01, Japan.
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Abstract

A high Schottky barrier contact is formed when amorphous Si-P solid solution film and p-type Si are brought into contact. Amorphous Si-P films were deposited by thermal decomposition of a Si2H6-PH3 mixture at 500°C. It was found that conductivity increases rapidly when PH3/Si2H6, is increased from 0.2 to 2. When PH3/i2H6 = 2, conductivity is 0.15 S/cm, and the dominant conduction mechanism is variable-range hopping. Barrier height of amorphous Si-P/p-type Si Schottky contact is estimated to be 0.8 – 0.85 V. This value exceeds the barrier height formed by any normal metal.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 375
Copyright
Copyright © Materials Research Society 1987

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