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High Resolution Transmission Electron Microscopy Investigation of the Defect Structure in CdMnTe Layers Grown on GaAs by MOCVD

Published online by Cambridge University Press:  26 February 2011

J. H. Mazur ,
P. Grodzinski ,
A. Nouhi  and
R. J. Stirn
J. H. Mazur
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
P. Grodzinski
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
A. Nouhi
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109.
R. J. Stirn
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109.
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Abstract

Electron diffraction and high resolution electron microscopy were used for analysis of Cd1−xMnxTe films grown on (100)2°[011] GaAs substrates by metal organic chemical vapor deposition (MOCVD) at 420°C (x=O.3) and 450°C (x=0.5). It has been found that these two conditions produce dramatically different microstructures. Two orientation relationships of the epilayers with respect to the substrate were observed. It is suggested that this phenomenon may be related to GaAs substrate surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 337
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Gaj, J.A., Galazka, R.R., and Nawrocki, M., Solid State Commun. 25,193(1978).Google Scholar
2.Stankiewicz, J. and Giriat, W., Fifteenth Photovoltaic Specialists Conference, p. 1089 (1981), IEEE, New York.Google Scholar
3.Nurmikko, A.V., Gunshor, R.L., and Kolodziejski, L.A., IEEE J. Quantum Electronics QE–22, 1785 (1986).Google Scholar
4.Turner, A.E., Gunshor, R.L., and Datta, S., Applied Optics 22, 3152 (1983).Google Scholar
5.Kinch, M.A. and Goodwin, M.W., J. Appl. Phys. 58, 4455 (1985).Google Scholar
6.Nouhi, A. and Stirn, R.J., Appl. Phys. Lett. 51,2251 (1987).Google Scholar
7.Cohen-Solal, G., Bailly, F. and Barbe', M., Appl. Phys. Lett. 49, 1519 (1986).Google Scholar
8.Ponce, F.A., Anderson, G.B., and Ballingall, J.M., Mat.Res.Symp. Proc. 90, (1987).Google Scholar