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High Resolution Study of CoSi2/Si (111) Interfaces

Published online by Cambridge University Press:  21 February 2011

A. Catana ,
Ping Lu  and
David J. Smith
A. Catana
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
Ping Lu
Affiliation:
Institute of Applied Physics, Swiss Federal Institute of Technology 1015 Lausanne, Switzerland
David J. Smith
Affiliation:
Center for Solid State Science and Department of Physics, Arizona State University, Tempe, AZ 85287, USA
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Abstract

The atomic structure of A- and B-type CoSi2/Si (111) interfaces has been investigated by observations of samples in cross-section using a 400 kV high-resolution electron microscope. The samples were prepared by UHV e–beam evaporation of Co layers followed by annealing at temperatures between 300°C and 500°C. Based upon image simulations for various interface bonding models we have found evidence for 7–fold Co coordination at the A–type CoSi2/Si interfaces and for 7– and 8–fold coordination at the B-type interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 105
Copyright
Copyright © Materials Research Society 1990

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