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High Resolution Optical Study of The Antisite Defect ASGa in GaAs; Correlation with Midgap Level EL2

Published online by Cambridge University Press:  28 February 2011

M. Skowronski ,
D.G. Lin ,
J. Lagowski ,
L.M. Pawlowicz ,
K.Y. Ko  and
H.C. Gatos
M. Skowronski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
D.G. Lin
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
L.M. Pawlowicz
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
K.Y. Ko
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H.C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

A high resolution optical study was carried out on GaAs crystals containing only the EL2 midgap level. The no-phonon line at 1.039 eV was identified as an intracenter transition within AsGa. An excellent correlation was found between the intensity of the no-phot1n AsGa line and the characteristic EL2 absorption. A correlation was also found between the characteristic optical absorption of EL2 and its concentration as determined by DLTS measurements. These results prove the direct association of EL2 with a neutral state of AsGa The presence of another midgap level ELO, contained in heavily doped oxygen crystals had no effect on the optical spectra of EL2, but it did alter the DLTS measurements. Thus, an accurate calibration was obtained for the determination of EL2 by optical absorption based on DLTS measurements on crystals containing only EL2 and thus involving no uncertainties introduced by other midgap levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 207
Copyright
Copyright © Materials Research Society 1985

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