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High Reflectance III-Nitride Bragg Reflectors Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

H. M. Ng  and
T. D. Moustakas
H. M. Ng
Affiliation:
Electrical and Computer Engineering Department and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston MA 02215, U.S.A. E-mail: hmng@lucent.com
T. D. Moustakas
Affiliation:
Electrical and Computer Engineering Department and Center for Photonics Research, Boston University, 8 Saint Mary's St., Boston MA 02215, U.S.A. E-mail: hmng@lucent.com
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Abstract

Distributed Bragg reflector (DBR) structures based on AlN/GaN have been grown on (0001) sapphire by electron-cyclotron-resonance plasma-assisted molecular-beam epitaxy (ECR-MBE). The design of the structures was predetermined by simulations using the transmission matrix method. A number of structures have been grown with 20.5 – 25.5 periods showing peak reflectance ranging from the near-UV to the green wavelength regions. For the best sample, peak reflectance up to 99% was observed centered at 467 nm with a bandwidth of 45 nm. The experimental reflectance data were compared with the simulations and show excellent agreement with respect to peak reflectance, bandwidth of high reflectance and the locations of the sidelobes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W1.8
Copyright
Copyright © Materials Research Society 1999

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