Hostname: page-component-8448b6f56d-c4f8m Total loading time: 0 Render date: 2024-04-19T17:34:49.219Z Has data issue: false hasContentIssue false
  • English
  • Français

High Rate Deposition of Amorphous Silicon Based Solar Cells using Modified Very High Frequency Glow Discharge

Published online by Cambridge University Press:  01 February 2011

Guozhen Yue ,
Baojie Yan ,
Jeffrey Yang  and
Subhendu Guha
Guozhen Yue
Affiliation:
gyue@uni-solar.com, United Solar Ovonic LLC, Research and Development, 1100 West Maple Road, Troy, MI, 48084, United States, (248)519-5317, (248)362-4442
Baojie Yan
Affiliation:
byan@uni-solar.com, United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
Jeffrey Yang
Affiliation:
jyang@uni-solar.com, United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
Subhendu Guha
Affiliation:
sguha@uni-solar.com, United Solar Ovonic LLC, 1100 West Maple Road, Troy, MI, 48084, United States
Get access

Abstract

We report our recent progress on high rate deposition of hydrogenated amorphous silicon (a-Si:H) and silicon germanium (a-SiGe:H) based n-i-p solar cells. The intrinsic a-Si:H and a-SiGe:H layers were deposited using modified very high frequency (MVHF) glow discharge. We found that both the initial cell performance and stability of the MVHF a-Si:H single-junction cells are independent of the deposition rate up to 15 Å/s. The average initial and stable active-area cell efficiencies of 10.0% and 8.5%, respectively, were obtained for the cells on textured Ag/ZnO coated stainless steel substrates. a-SiGe:H single-junction cells were also optimized at a rate of ~10 Å/s. The cell performance is similar to those made using conventional radio frequency technique at 3 Å/s. By combining the optimized component cells made at 10 Å/s, an a-Si:H/a-SiGe:H double-junction solar cell with an initial active-area efficiency of 11.7% was achieved.

Keywords

amorphousplasma depositionSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A15-04
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Guha, S., Yang, J., Jones, S., Chen, Y., and Williamson, D.L., Appl. Phys. Lett. 61, 1444 (1992).Google Scholar
[2] Shah, A., Dutta, J., Wyrsch, N., Prasad, K., Curtins, H., Finger, F., Howling, A., and Hollenstein, Ch., Mater. Res. Soc. Symp. Proc. 258, 15 (1992).Google Scholar
[3] Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A. anna, Vaucher, N. Pellaton, Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.D., Giannoulès, P., and Koehler, J., Mater. Res. Soc. Symp. Proc. 420, 3 (1996).Google Scholar
[4] Yan, B., Yang, J., Guha, S., and Gallagher, A., Mater. Res. Soc. Symp. Proc. 557, 115 (1999).Google Scholar
[5] Yang, J., Yan, B., Smeets, J., and Guha, S., Mater. Res. Soc. Symp. Proc. 664, A11.3 (2001).Google Scholar
[6] Yue, G., Yan, B., Ganguly, G., Yang, J., Guha, S., Teplin, C., and Williamson, D.L., Proc. of 4th World Conf. on Photovoltaic Energy Conversion (Hawaii, USA), p. 1588 (2006).Google Scholar
[7] Yue, G., Yan, B., Ganguly, G., Yang, J., Guha, S., and Teplin, C., Appl. Phys. Lett. 88, 263507 (2006).Google Scholar
[8] Guha, S., Yang, J., Pawlikiewicz, A., Glatfelter, T., Ross, R., and Ovshinsky, S.R., Appl. Phys. Lett. 54, 2330 (1989).Google Scholar