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High Quality Ultra-Thin Tunneling N2O Oxides Fabricated by Rtp

Published online by Cambridge University Press:  21 February 2011

G. W. Yoon ,
A. B. Joshi ,
J. Kim  and
D. L. Kwong
G. W. Yoon
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
A. B. Joshi
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
J. Kim
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
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Abstract

In this paper, a detailed reliability investigation is presented for ultra-thin tunneling (∼50 Å) oxides grown in N2O ambient using rapid thermal processing (RTP). These N2Oss-oxides are compared with oxides of identical thickness grown in O2 ambient by RTP. The reliability investigations include time-dependent dielectric breakdown as well as stress-induced leakage current in MOS capacitors with these gate dielectrics. Results show that ultra-thin N2O-oxides show much improved reliability as compared to oxide grown in O2 ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 291
Copyright
Copyright © Materials Research Society 1993

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References

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