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High Quality P-Type A-SiC Film Doped with B(Ch3)3 and its Application to A-Si Solar Cells

Published online by Cambridge University Press:  26 February 2011

Yukinori Kuwano  and
Shinya Tsuda
Yukinori Kuwano
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd.1-18-13 Hashiridani, Hirakata City, Osaka, JAPAN
Shinya Tsuda
Affiliation:
Functional Materials Research Center, SANYO Electric Co., Ltd.1-18-13 Hashiridani, Hirakata City, Osaka, JAPAN
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Abstract

High-quality p-type a-SiC films were prepared using a new doping gas, B(CH3)3, instead of B2H6. a-SiC films deposited with B(CH3 )1 show high photoluminescence intensity and low defect density. Doping efficiency was also improved by usiyg B(CH3 )3. A module efficiency of more than 9% was achieved for a 100 cm2 a-Si solar cell whose p-layer was doped with B(CH3 )3. A new plasma CVD method, called controlled plasma magnetron (CPM) method was developed to realize high electron-density plasma with low damage to substrate. High conductive p-type μc(microcrystalline)- SiC films were prepared by CPM method with B(CH3 )3. CPM method was found to be suitable not only for preparation of μc films but for high-speed deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 557
Copyright
Copyright © Materials Research Society 1988

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References

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