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High Quality MPCVD Epitaxial Diamond Film for Power Device Application

Published online by Cambridge University Press:  26 February 2011

Jie Yang ,
Weixiao Huang ,
T. P. Chow  and
James E. Butler
Jie Yang
Affiliation:
Gas/Surface Dynamics Section, Naval Research Laboratory, Washington DC 20375, U.S.A. NOVA Research Inc., Alexandria, VA 22308, U.S.A.
Weixiao Huang
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
T. P. Chow
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.
James E. Butler
Affiliation:
Gas/Surface Dynamics Section, Naval Research Laboratory, Washington DC 20375, U.S.A.
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Abstract

As a wide bandgap (5.47 eV) semiconductor material, single crystal diamond has high electron mobility (reportedly between 2000 and 4400 cm2V-1s-1), high electron saturation velocity (2×107 cms-1), high breakdown voltage (>107 Vcm-1), and high thermal conductivity (>21 Wcm-1K-1). Diamond-based semiconductor devices offer the potential of operation at high voltages, power levels, temperatures and under extreme radiation conditions. In this work, we present our effort to grow high quality homo-epitaxial diamond films on (100)-single crystal diamond substrates by microwave plasma chemical vapor deposition (MPCVD). The growth rate can vary from 0.01 to 100 micrometers per hour, depending on growth conditions, doping, and quality; and using a “lift-off” process, free-standing homo-epi films with remarkably low p-type doping (1×1014–1×1017 cm-3) and exceptionally low compensation ∼ 1×1013 cm-3 have been made. Vertical and lateral structure high voltage diamond Schottky rectifiers have been built for frequency dependent capacitance-voltage (C-V), and current-voltage (I-V) measurements. A breakdown voltage of 8 kV at 100 μm distance and 12.4 kV at 300 μm distance is recorded for lateral structure devices without Ohmic contact (back to back Schottky contacts), while an un-optimized vertical device with an back-side Ohmic contact has demonstrated a forward voltage drop of 7 V at 18 A/cm2 in a device that can only block 600 V. New test results show 3.7 kV blocking voltage vertical devices on 20 μm freestanding MPCVD diamond film. This data shows that the quality of diamond film extremely affect the electrical properties of the built devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B7.2
Copyright
Copyright © Materials Research Society 2005

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References

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