Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-05T15:49:04.764Z Has data issue: false hasContentIssue false
  • English
  • Français

High Quality Interfaces in a-Si:H/a-Sic:H Superlattices

Published online by Cambridge University Press:  25 February 2011

N. Bernhard ,
M. Kirsch ,
R. Eigenschenk ,
M. Bollu ,
C. Wetzel ,
F. Müller  and
R. Schwarz
N. Bernhard
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
M. Kirsch
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
R. Eigenschenk
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
M. Bollu
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
C. Wetzel
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
F. Müller
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
R. Schwarz
Affiliation:
Technische Universität München, Physik-Department E16 D-8046 Garching, West Germany
Get access

Abstract

Amorphous multilayers with low interface defect density were deposited in an ultrahigh-vacuum RF-glow discharge reactor by computer-controlled fast gas switching. An extensive film characterization was done including determination of carbon content by PES (proton enhanced scattering), grazing-incidence X-ray diffraction, measurement of ambipolar diffusion length, FTIR spectroscopy and hydrogen effusion. From PDS (photothermal deflection spectroscopy) a defect density of below 1011 cm−2 per interface is found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 192: Symposium O – Amorphous Silicon Technology - 1990 , 1990 , 237
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Arya, R.R., Catalano, A., O’Dowd, J., Morris, J., Wood, G., Proc. 18th IEEE PVSC, Las Vegas, 1985, p. 1710.Google Scholar
2. Tsuda, S., Haku, H., Tarui, H., Matsuyama, T., Sayama, K., Nakashima, Y., Nakano, S., Ohnishi, M., Kuwano, Y., MRS Proc. 95 (1987) 311.Google Scholar
3. Dietrich, K., Karg, F., Juergens, W., Miiller, F., Proc. 9th EC Photovolt. Sol. Energy Conf., Freiburg, 1989, p. 998.Google Scholar
4. Baker, S.H., Spear, W.E., Gibson, R.A.G., Phil. Mag. B (1989).Google Scholar
5. Solomon, I., Winter School on Amorphous Silicon, Folgaria, 1988.Google Scholar
6. Wagner, H., Beyer, W., Proc. 5th EC Photovolt. Sol. Energy Conf., Kavouri, 1983, p. 803.Google Scholar
7. Tawada, Y. et al., J. Appl. Phys. 53 (1982) 7.Google Scholar
8. Paul, W. et al., Phys. Rev. B18 (1978) 4228.Google Scholar
9. Beyer, W., J. Non-Cryst. Solids 97&98 (1987) 1027.Google Scholar
10. Ritter, D., Zeldov, E., Weiser, K., Phys. Rev. B38 (1988) 8296.Google Scholar
11. Asano, A. et al., J. Non-Cryst. Solids 97&98 (1987) 971.Google Scholar
12. de Seta, M. t al., Superlatt. & Microstr. 5 (1989) 149.Google Scholar
13. Wang, S., Cheng, R., J. Non-Cryst. Solids 114 (1989) 702.Google Scholar