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High Quality Heteroepitaxial ß-SiC Deposited from Methyltrichlorosilane at 1200°C without any Buffer Layer

Published online by Cambridge University Press:  21 February 2011

S. Vepřek ,
Th. Kunstamann ,
J. Hofmann ,
D. Volm  and
B. Meyer
S. Vepřek
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching/Munich
Th. Kunstamann
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching/Munich
J. Hofmann
Affiliation:
Institute for Chemistry of Information Recording, Technical University Munich, Lichtenbergstr. 4, D-85747 Garching/Munich
D. Volm
Affiliation:
Department of Physics, Technical University Munich, James-Franck-Str., D-85747 Garching/Munich, Germany
B. Meyer
Affiliation:
Department of Physics, Technical University Munich, James-Franck-Str., D-85747 Garching/Munich, Germany
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Abstract

Using methyltrichlorosilane diluted with hydrogen and a modified temperature program during the initial stage of the deposition we have improved the deposition process and obtained high quality heteroepitaxial films on Si (100) without any carbon buffer layer. The maximum temperature of 1200°C which is used for the substrate cleaning and film deposition is significantly lower than that used in the conventional deposition system SiH4/C3H8 of about 1400°C for the buffer layer and 1350°C for deposition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 183
Copyright
Copyright © Materials Research Society 1996

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References

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