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High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells

Published online by Cambridge University Press:  28 February 2011

Benjamin Rockwell ,
H.R. Chandrasekhar ,
Meera Chandrasekhar ,
Fred H. Pollak ,
H. Shen ,
L.L. Chang ,
W.I. Wang  and
L. Esaki
Benjamin Rockwell
Affiliation:
Department of Physics, University of Missouri-Columbia, Columbia, MO 65211
H.R. Chandrasekhar
Affiliation:
Department of Physics, University of Missouri-Columbia, Columbia, MO 65211
Meera Chandrasekhar
Affiliation:
Department of Physics, University of Missouri-Columbia, Columbia, MO 65211
Fred H. Pollak
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, N.Y. 11210
H. Shen
Affiliation:
Physics Department, Brooklyn College of CUNY, Brooklyn, N.Y. 11210
L.L. Chang
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y. 10598-0218
W.I. Wang
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y. 10598-0218
L. Esaki
Affiliation:
IBM Thomas J.Watson Research Center, Yorktown Heights, N.Y. 10598-0218
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Abstract

The pressure coefficients (α) of the excitonic transitions arising from the conduction (CB) to the heavy (HH) and light (LH) hole sub-bands of a GaSb-AlSb multiple quantum well structure (MQW) grown on a GaAs substrate are determined. Photoreflectance (PR) and Photoluminescence (PL) studies are employed at cryogenic temperatures. The α for the ground sub-band transition is ~10% smaller than that for bulk GaSb. This effect is explained by in-plane deformation of the MQW arising from the substrate under external pressure. On the other hand, the α get progressively smaller for the higher sub-band transitions due to quantum confinement The PL intensity drops dramatically as the direct Γ CB crosses the L CB at ~10kBars but the PR intensity persists until the X CB crosses each sub-band energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 751
Copyright
Copyright © Materials Research Society 1990

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