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A High Performance Submicrometer CMOS/SOI Technology Using Ultrathin Silicon Films on Simox

Published online by Cambridge University Press:  28 February 2011

P.K. Vasudev ,
K.W. Terrill  and
S. Seymour
P.K. Vasudev
Affiliation:
Hughes Research Laboratories Malibu, California 90265
K.W. Terrill
Affiliation:
Hughes Research Laboratories Malibu, California 90265
S. Seymour
Affiliation:
Hughes Research Laboratories Malibu, California 90265
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Abstract

The use of ultrathin SIMOX wafers for fabricating submicrometer CMOS integrated circuits is described. It is demonstrated from ring oscillator speeds that properly designed devices can exhibit very high transconductance and performance superior to circuits using bulk Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 349
Copyright
Copyright © Materials Research Society 1988

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References

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