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High Mobility Pentacene Field Effect Transistors on Plastic

Published online by Cambridge University Press:  01 February 2011

Siddharth Mohapatra
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Michelle Grigas
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Robert Wenz
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Robert Rotzoll
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Viorel Olariu
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Oleg Shchekin
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Klaus Dimmler
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado
Ananth Dodabalapur
Affiliation:
OrganicID Inc., 422 East Vermijo, Colorado Springs. Colorado Microelectronic Research center, University of Texas at Austin, Austin, Texas
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Abstract

This paper reports the electrical properties of thin-film transistors with pentacene active layers used in a bottom contact transistor geometry utilizing solution processed poly-4-vinylphenol (PVP) as the gate dielectric processed on a polyethylene napthalate (PEN) substrate. The transistors sometimes exhibit mobilities in excess of 1cm2/Vs. The effect of various surface treatments of the gate insulator, on the electrical properties of these transistors discussed. The development of photolithographically defined 2νm channel length bottom contact transistors is emphasized as the speed of circuit elements such as the rectifier scale inversely as the square of the channel length of the transistors. Surface cleaning and semiconductor deposition techniques that improve transistor characteristics and reduce hysteresis are evaluated and the variation of the ION/IOFF ratios with the different surface treatments is noted.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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