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High Mobility Nitrides

Published online by Cambridge University Press:  21 March 2011

K. Scott ,
A. Butcher ,
Marie Wintrebert-Fouquet ,
Patrick P.–T. Chen ,
Trevor L. Tansley  and
Surapon Srikeaw
K. Scott
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
A. Butcher
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
Marie Wintrebert-Fouquet
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
Patrick P.–T. Chen
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
Trevor L. Tansley
Affiliation:
Physics Department, Macquarie University, Sydney NSW 2109, Australia
Surapon Srikeaw
Affiliation:
Material Physics Division, Department of Physics, Prince of Songkla University, Hat-Yai, Songkla, 90112, Thailand.
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Abstract

The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substantially upgraded. In this paper we describe some of the parameters that are important for high purity indium nitride growth, while providing the most recent results for films grown with the upgraded system. A long lag time (greater than 100 hours of growth time) has been observed before obtaining stable material properties for a given set of growth conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.9.1
Copyright
Copyright © Materials Research Society 2002

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