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High Current Density Implantation and Ion Beam Annealing in Si*

Published online by Cambridge University Press:  25 February 2011

O. W. Holland  and
J. Narayan
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
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Abstract

Annealing of amorphous layers in Si by high flux, selfion irradiation will be discussed. The mechanism for the lattice recovery is presented and related to the structure of the residual damage. It will be shown that highly supersaturated, alloyed regions, free from extended defects, result from the annealing process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 235
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation

References

REFERENCES

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