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High and Low Temperature Measurements of the Chromium Diffusivity in Silicon

Published online by Cambridge University Press:  25 February 2011

J. Zhu  and
D. Barbier
J. Zhu
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621, Villeurbanne cedex, FRANCE
D. Barbier
Affiliation:
Laboratoire de Physique de la Matière, Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621, Villeurbanne cedex, FRANCE
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Abstract

By grouping high and low temperature diffusivity measurements in boron-doped silicon, a new diffusivity law for chromium in the 20–1050 °C temperature range has been established. High temperature diffusivities were deduced from erfc fits of chromium-boron pair profiles measured by means of Deep Level Transient Spectroscopy in chromium-plated substrates, after annealing for a short time in a lamp furnace. Low temperature diffusivities were derived from the association time constants of the chromium-boron pairing reaction in chromium-contaminated specimens. The whole data points were well fitted using the following expression for the diffusion coefficient: D= 2.6×10-3 exp(-0.81 ± 0.02 eV/kT). Because of the wide 1/T interval available, the migration enthalpy value is more accurate than the previous determinations using only high temperature diffusivity results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 567
Copyright
Copyright © Materials Research Society 1990

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