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HgCdTe(211)B Grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE

Published online by Cambridge University Press:  10 February 2011

S. Rujirawat ,
P. S. Wijewarnasuriya ,
Y. P. Chen ,
F. Aqariden  and
S. Sivananthan
S. Rujirawat
Affiliation:
Microphysics Laboratory, Dept. Of Physics (M/C 273), The University of Illinois at Chicago, 845, W. Taylor Street, Room #2236, Chicago, IL 60680; wije@tigger.cc.uic.edu
P. S. Wijewarnasuriya
Affiliation:
Microphysics Laboratory, Dept. Of Physics (M/C 273), The University of Illinois at Chicago, 845, W. Taylor Street, Room #2236, Chicago, IL 60680; wije@tigger.cc.uic.edu
Y. P. Chen
Affiliation:
Microphysics Laboratory, Dept. Of Physics (M/C 273), The University of Illinois at Chicago, 845, W. Taylor Street, Room #2236, Chicago, IL 60680; wije@tigger.cc.uic.edu
F. Aqariden
Affiliation:
Microphysics Laboratory, Dept. Of Physics (M/C 273), The University of Illinois at Chicago, 845, W. Taylor Street, Room #2236, Chicago, IL 60680; wije@tigger.cc.uic.edu
S. Sivananthan
Affiliation:
Microphysics Laboratory, Dept. Of Physics (M/C 273), The University of Illinois at Chicago, 845, W. Taylor Street, Room #2236, Chicago, IL 60680; wije@tigger.cc.uic.edu
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Abstract

We present preliminary results on HgCdTe(211)B layers grown on CdTe(211)B/ZnTe(211)B/Si substrates by molecular beam epitaxy. As-grown layers show excellent n-type characteristics as measured by Hall effect. Hall mibilities higher than 1×10 cm2/v-s have been measured at 40K for Cd composition ∼24% with doping level ∼ 3×1015 cm−3. Obtained RHEED patterns during the growth shows very smooth surface morphology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 281
Copyright
Copyright © Materials Research Society 1997

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References

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