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Heteroepitaxy of Si/Si1−xGex Grown by Remote Plasma-Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  16 February 2011

T. Hsu ,
R. Qian ,
D. Kinosky ,
J. Irby ,
B. Anthony ,
S. Banerjee ,
A. Tasch  and
C. Magee
T. Hsu
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
R. Qian
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
D. Kinosky
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
J. Irby
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
B. Anthony
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
S. Banerjee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
A. Tasch
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78712
C. Magee
Affiliation:
Evans East Inc., Plainsboro, NJ 08536
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Abstract

Low temperature heteroepitaxial growth of Si1−xGex films with mole fractions “x” ranging from 0.07 to 0.72 on Si(100) has been achieved by Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD) at substrate temperatures of 305°C and 450°C. Reflection High Energy Electron Diffraction (RHEED), Transmission Electron Microscopy (TEM), and Secondary Ion Mass Spectroscopy (SIMS) were employed to characterize the crystallinity, composition and interfacial sharpness. The Si1−xGex films with thickness below the critical layer thickness were confirmed to have excellent crystallinity with defect density below the sensitivity of TEM analysis (105 cm−2). The Ge profile, from SIMS analysis, in a Si/Si0.8Ge0.2/Si/Si0.82Ge0.18 multilayer structure was found to have a transition width of 30Å/decade, which is the resolution limit of SIMS analysis. There is no Ge segregation observed at the Si/Si1−xGex interface. A superlattice structure with 24 pairs of Si(60Å)/Si0.8Ge0.2 (60Å) layers has been successfully grown by RPCVD at 450°C. From cross-sectional TEM analysis, very low defect densities and abrupt Ge transitions were confirmed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 223: Symposium E – Low Energy Ion Beam and Plasma Modification of Materials , 1991 , 223
Copyright
Copyright © Materials Research Society 1991

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References

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