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Heteroepitaxy of Gallium Arsenide on Germanium Coated Silicon Substrates

Published online by Cambridge University Press:  25 February 2011

Shirley S. Chu ,
T. L. Chu  and
H. Firouzi
Shirley S. Chu
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
T. L. Chu
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
H. Firouzi
Affiliation:
School of Engineering and Applied Science, Southern Methodist University, Dal las, Texas 75275 U. S. A.
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Abstract

Single crystalline epitaxial GaAs layers have been grown on silicon substrates with a thin germanium interlayer. All semiconductor layers were deposited by the chemical vapor deposition technique. The surface condition of the silicon substrate is an important factor affecting the quality of GaAs/Ge films on silicon. P+/n homojunction solar cells of 0.25 cm2 area with an AM1 efficiency near 12% have been prepared.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 135
Copyright
Copyright © Materials Research Society 1986

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References

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[2] Chu, Shirley S., Chu, T. L., Zhang, F. S., Chen, W. J., and Wang, Q. H., Proceedings of the Sixteenth IEEE Photovoltaic Specialists Conference, (IEEE, New York, 1982), p. 1149.Google Scholar
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