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Heteroepitaxy Between Lattice Mismatched Materials with Van Der Waals Interactions

Published online by Cambridge University Press:  28 February 2011

Atsushi Koma
Atsushi Koma*
Affiliation:
University of Tokyo, Department of Chemistry Bunkyo ku, Tokyo 113, Japan
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Abstract

The lattice matching condition encountered usually in the heteroepitaxial growth has been proved to be relaxed drastically, if one uses the interface having van der Waals nature. Such interface can be realized on a cleaved face of a layered material or a quasi-one dimensional material and on a surface of a dangling-bond-terminated three dimensional material. Various kinds of heterostructures, which cannot be made by conventional growth methods, can be fabricated by using a variety of layered transition metal dichalcogenides, in which there exist superconducting, metallic, semiconducting or insulating layered materials. Moreover those heterostructures have been found to be grown on such an ordinary three-dimensional material as GaAs, if the dangling bonds on its surface are terminated by suitable atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 105
Copyright
Copyright © Materials Research Society 1990

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References

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