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Heteroepitaxial Growth of In203 on Ysz (100) Single Crystal Surface

Published online by Cambridge University Press:  10 February 2011

M. Orita ,
H. Ohta ,
H. Tanji ,
H. Hosono  and
H. Kawazoe
M. Orita
Affiliation:
Advanced Technology Laboratory, R&D Center, HOYA Co., 3-3-1 Musashino, Akishima, Tokyo, 196-8510, Japan, orita@sngw.rdc.hoya.co.jp
H. Ohta
Affiliation:
Advanced Technology Laboratory, R&D Center, HOYA Co., 3-3-1 Musashino, Akishima, Tokyo, 196-8510, Japan
H. Tanji
Affiliation:
Advanced Technology Laboratory, R&D Center, HOYA Co., 3-3-1 Musashino, Akishima, Tokyo, 196-8510, Japan
H. Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama, 226-8503, Japan
H. Kawazoe
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda-cho, Midori-ku, Yokohama, 226-8503, Japan
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Abstract

In203 films were deposited on YSZ (001) single crystal surface at 800°C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The w locking curve full width of half maximum (FWHM) of the In203 (004) x-ray diffraction was 0.06°. Film conductivities were ∼10 S/cm or less, while carriers on the order of lO18/cm3 were generated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 399
Copyright
Copyright © Materials Research Society 2000

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References

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