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Heteroepitaxial Growth of ImP and GaInAs on GaAs Substrates Using Tertiarybutylarsine and Tertiarybutylphosphine

Published online by Cambridge University Press:  28 February 2011

Shirley S. Chu ,
T. L. Chu ,
C. H. Yoo  and
G. L. Smith
Shirley S. Chu
Affiliation:
Electrical Engineering Department, University of South Florida, Tampa, Florida 33620
T. L. Chu
Affiliation:
Electrical Engineering Department, University of South Florida, Tampa, Florida 33620
C. H. Yoo
Affiliation:
Electrical Engineering Department, University of South Florida, Tampa, Florida 33620
G. L. Smith
Affiliation:
Electrical Engineering Department, University of South Florida, Tampa, Florida 33620
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Abstract

The heteroepitaxial growth of InP and GaInAs on GaAs substrates has been studied by using a new combination of source materials: ethyldimethylindium (EDMIn) and trimethylgallium (TMGa) or triethylgallium (TEGa) as group III sources, and tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs) as group V sources. The heteroepitaxial growth was carried out in a horizontal reactor in H2 under atmospheric pressure using a 2 kW quartz lamp as the substrate heater. Epitaxial InP layers of good surface morphology were obtained by using a two step process. The continuity and thickness of the buffer layer are important parameters. The InP layers deposited at 600°C are n-type, and the electron concentration decreases with decreasing TBP/EDMIn molar ratio. The 4.2 K photoluminescence of InP films is very similar to that of homoepitaxial InP films deposited at 600°C using trimethylindium (TMIn) and phosphine. Epitaxial GaxIn1–xAs layers with In composition varying from 3% to 53% have been deposltedi on GaAs substrates at 500° -550°C. A single growth step can be used for the deposition of GaxIn1–xAs with In composition of less than 20%. An InP buffer layer was used when the GaxIn1–xAS layer contains about 53% In. The composition of GaInAs was determined by optical absorption and photoluminescence techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 198: Symposium V – Epitaxial Heterostructures , 1990 , 271
Copyright
Copyright © Materials Research Society 1990

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References

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