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Heteroepitaxial Growth of Germanium Films by Supersonic Free Jet Chemical Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

Djula Eres ,
J. W. Sharp  and
D. H. Lowndes
Djula Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
J. W. Sharp
Affiliation:
The University of Tennessee, Knoxville, TN
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
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Abstract

A supersonic free jet operated in continuous wave and pulsed mode was used to grow Ge films on (100) GaAs and (100) Si substrates. The Ge-bearing source molecule digermane (Ge2H6) was seeded (at 5% concentration) in a helium carrier gas. A free jet expansion of this gas mixture was directed toward the heated substrate surface, where Ge film growth took place by surface-induced thermal decomposition of the ballistically impinging digermane molecules. The thickness distribution across the substrate surface was fitted by a cosmJ distribution. The values of m spanned the range 6–35. The upper limit on growth resulting from “background” gas scattered out of the jet was found to be less than 10% of the Ge film thickness for growth on (100) GaAs, and around 25% for growth on (100) Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 359
Copyright
Copyright © Materials Research Society 1990

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