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Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

Published online by Cambridge University Press:  15 February 2011

S. Henke ,
K.H. Thürer ,
S. Geier ,
B. Rauschenbach  and
B. Stritzker
S. Henke
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg
K.H. Thürer
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg
S. Geier
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg
B. Rauschenbach
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg
B. Stritzker
Affiliation:
Institut für Physik, Universität Augsburg, D-86135 Augsburg
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Abstract

On mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 359: Symposium G – Science and Technology of Fullerene Materials , 1994 , 399
Copyright
Copyright © Materials Research Society 1995

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References

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