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Heteroepitaxial bonding of Si for hybrid photonic devices

Published online by Cambridge University Press:  22 March 2013

Eric Le Bourhis ,
Anne Talneau ,
Isabelle Sagnes ,
Gilles Patriarche ,
Ludovic Largeau  and
David Troadec
Eric Le Bourhis
Affiliation:
Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France.
Anne Talneau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France.
Isabelle Sagnes
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France.
Gilles Patriarche
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France.
Ludovic Largeau
Affiliation:
Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, 91460 Marcoussis, France.
David Troadec
Affiliation:
Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, 59652 Villeneuve d'Ascq cedex, France
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Abstract

New fabrication routes for hybrid photonic devices are explored. We report on silicon bonding to III-V semi-conducteurs e.g. Si/InP for emission/amplification function. The materials have been bonded to silicon since it can be nanostructured to obtain optical guides. The bonded surfaces are of the order of ∼ 1 cm2. Special attention has been paid to the surface preparation. The obtained structure has been characterized employing XRD while the mechanical response and interface strength have been investigated employing instrumented nanoindentation.

Keywords

semiconductingnanostructurenano-indentation
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1510: Symposium DD – Group IV Semiconductor Nanostructures and Applications , 2013 , mrsf12-1510-dd16-01
Copyright
Copyright © Materials Research Society 2013

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References

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