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Heavy Phosphorus Doping in Molecular Beam Epitaxial Grown Silicon and Silicon/Germanium with a Gap Decomposition Source

Published online by Cambridge University Press:  15 February 2011

G. Lippert ,
H. J. Osten  and
D. KrÜger
G. Lippert
Affiliation:
Institute of Semiconductor Physics, PO Box 409, D-15204 Frankfurt (0), Germany
H. J. Osten
Affiliation:
Institute of Semiconductor Physics, PO Box 409, D-15204 Frankfurt (0), Germany
D. KrÜger
Affiliation:
Institute of Semiconductor Physics, PO Box 409, D-15204 Frankfurt (0), Germany
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Abstract

Donor-doping in silicon molecular beam epitaxy (MBE) is still an open problem, due to the low solid solubility and the strong segregation behavior (Sb, As) or to the high vapor pressure of the doping elements (P, As). Based on its high solubility elemental P2 would be the best candidate for heavy n-type doping. A new developed phosphorus source, based on the decomposition of solid GaP with a simultaneously mass separation of the parasitic Ga atoms has been applied. Homogenous P-doping higher than 1019 cm3 in Si and strained SiGe has been achieved. No surface accumulation of phosphorus was observed. The parasitic Ga incorporation is about three orders of magnitude below the P concentration. In this paper we will demonstrate the use of such cell to incorporate electrical active phosphorus during MBE growth. The incorporation probabilities into Si and strained SiGe will be compared. The dependence of segregation-/diffusion processes of phosphorus on growth temperature during the MBE will be shown. SIMS investigations on undoped Si layers reveal no P or Ga “memory effect” of the UHV equipment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 411
Copyright
Copyright © Materials Research Society 1995

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References

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