Hostname: page-component-76fb5796d-x4r87 Total loading time: 0 Render date: 2024-04-26T21:01:20.016Z Has data issue: false hasContentIssue false

Hardness and Elastic Modulus Measurements of AIN and TiN Sub-Micron Thin Films Using the Continuous Stiffness Measurement Technique with Fem Analysis

Published online by Cambridge University Press:  10 February 2011

T. A. Rawdanowicz
Affiliation:
NSF CAMSS, Dept of Mechanical Engineering, NC A % T State Univ, Greensboro, NC 27411
J. Sankar
Affiliation:
NSF CAMSS, Dept of Mechanical Engineering, NC A % T State Univ, Greensboro, NC 27411
J. Narayan
Affiliation:
NSF CAMSS, Dept of Materials Science and Engineering, NC State Univ, Raleigh, NC 27695
V. Godbole
Affiliation:
NSF CAMSS, Dept of Materials Science and Engineering, NC State Univ, Raleigh, NC 27695
Get access

Abstract

The hardnesses and elastic moduli of aluminum nitride (AIN) and titanium nitride (TiN) sub-micron thin films pulsed laser deposited (PLD) on silicon (111) were measured using nanoindentation based on a continuous stiffness measurement (CSM) technique. Thin film thicknesses, based on profile measurements of simultaneously grown step samples, are 210 nm and 180 nm with surface roughnesses of 12 nm and 2 nm for AlN and TiN, respectively. X-ray diffraction showed AlN as a highly textured polycrystalline AlN wurzite structure with a (0001) orientation and TiN as a cubic structure with a (111) orientation. The CSM technique provided hardness and elastic modulus as a function of depth. Finite element modeling (FEM) aided in determining the optimum indenter contact depth at which the thin films behaved as a semi-infinite solid with negligible substrate induced artifacts. Hardnesses of these AlN and TiN thin films were, determined analytically, 25 GPa and 33 GPa, as compared to FEM results of 24 GPa and 30 GPa, respectively. The elastic moduli measured 320 GPa and 370 GPa for these AlN and TiN thin films, respectively.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chan, H-L., Kumar, A., Sanderson, L., and Weimer, J. J., Mat. Res. Soc. Symp. Proc. 441, p. 487 (1997).Google Scholar
2. Sundgren, J-E. and Hentzell, H. T. G., J. Vac. Sci. Technol. A. 5, p. 2259 (1986).Google Scholar
3. Oliver, W. C. and Pharr, G. M., J. Mater. Res. 7, p. 1564 (1992).Google Scholar
4. Knapp, J. A., Follstaedt, D. M., Barbour, J. C., Myers, S. M., Ager, J. W., Monteiro, O. R., and Brown, I. G., Mat. Res. Soc. Symp. Proc. 438 p. 617 (1997).Google Scholar
5. Pharr, G. M. and Oliver, W. C., MRS Bullentin 17, p. 28 (1992).Google Scholar
6. Lucas, B. N., Oliver, W. C., and Swindeman, J. E., Presented at 1998 Spring MRS Meeting. San Francisco, CA, (1998).Google Scholar
7. Thompson, C. V. and Carel, R., J. Mech. Phys. Solids 44, p. 657 (1996).Google Scholar
8. Sproul, W. D., Mat. Res. Soc. Symp. Proc. 434, p. 47 (1996).Google Scholar
9. Butcher, K. S. A., Tansley, T. L., and Li, X., Surf. and Interface Anal. 25, p. 99 (1997).Google Scholar
10. Linchinchi, M., Lenardi, C., Haupt, J., and Vitali, R., Thin Sol. Fi. 312, p. 240 (1998).Google Scholar