Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-06T05:55:15.520Z Has data issue: false hasContentIssue false
  • English
  • Français

Halogen Based Surface Chemistries for Graphene Synthesis

Published online by Cambridge University Press:  01 February 2011

Srikanth Raghavan ,
Timothy C. Nelson ,
Tobias Denig  and
C D Stinespring
Srikanth Raghavan
Affiliation:
sraghava@mix.wvu.edu, West Virginia University, Department of Physics, Morgantown, West Virginia, United States
Timothy C. Nelson
Affiliation:
tnelson8@mix.wvu.edu, West Virginia University, Department of Chemical Engineering, Morgantown, West Virginia, United States
Tobias Denig
Affiliation:
tdenig@mix.wvu.edu
C D Stinespring
Affiliation:
Charter.Stinespring@mail.wvu.edu, West Virginia University, Department of Chemical Engineering, Morgantown, West Virginia, United States
Get access

Abstract

Halogen based (CF4 and Cl2) inductively coupled reactive ion etching (ICP-RIE) has been used to selectively etch silicon from 6H-SiC to produce a controlled number of carbon layers. After annealing at temperatures in the range of 550 °C to 1100 °C to reconstruct the near surface layers, x-ray photoelectron spectroscopy has been used to characterize the composition of the films. For the Cl2 based ICP-RIE, two carbon species are observed. One is due to carbon bound as SiC in the substrate and a second which can be attributed to graphene. In the case of CF4 based etching the situation is similar except the second peak is most closely aligned with p-type graphene. This is most likely due to electron transfer from the graphene to the trace levels of fluorine remaining on the surface after annealing.

Keywords

x-ray photoelectron spectroscopy (XPS)surface chemistryelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1259: Symposium S – Graphene Materials and Devices , 2010 , 1259-S17-02
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lin, Y-M, Jenkins, K.A., Valdes-Garcia, A., Small, J.P., Farmer, D.B., and Avouris, P., Nano Lett. 9, 422 (2009).Google Scholar
2 Tauzettel, B., Bulaev, D.V., Loss, D., and Bukard, G., Nature Physics 3, 192 (2007).Google Scholar
3 Nair, R.R., Blake, P., Grigorenko, A.N., Novoselov, K.S., Booth, T.J., Stauber, T., Peres, N.M.R., and Geim, A. K., Science 321, 1308 (2008).Google Scholar
4 Schedin, F., Geim, A. K., Morozov, S. V., Hill, E. W., Blake, P., Katsnelson, M. I., and Novoselov, K. S., Nature Materials 6, 652 (2007).Google Scholar
5 Geim, A.K., and Novoselov, K.S., Nature Materials 6, 183 (2007).Google Scholar
6 Hass, J., Heer, W.A. de, and Conrad, E.H., J. Phys.: Condens. Matter 20, 323202 (2008).Google Scholar
7 Juang, Z-Y, Wu, C-Y, Lo, C-W, Huang, C-F, Hwang, J-C, Chen, F-R, Huang, C-F, Hwang, J-C, Chen, F-R, Leou, K-C, and Tsai, C-H, Carbon 47, 2026 (2009).Google Scholar
8 Woodworth, A.A. and Stinespring, C.D., Carbon, 48, 1999 (2010).Google Scholar
9 Raghavan, S., Comparative Studies of 6H-SiC Surface Preparation, M.S. Thesis, West Virginia University (2008).Google Scholar
10 Chen, W., Xu, H., Liu, L., Gao, X., Qi, D., Peng, G., Tan, S.C., Feng, Y., Loh, K.P., Wee, A.T.S., Surf. Sci. 596, 176 (2005).Google Scholar
11 Bozso, F., Yates, J.T. Jr., Choyke, W.J., and Muehlhoff, L., J. Appl. Phys. 57, 2771 (1995).Google Scholar
12 Chen, W., Chen, S., Qi, D.C., Gao, X.Y., and Wee, A.T.S., J. Am. Chem. Soc. 129, 10418 (2007).Google Scholar
13 Bekyarova, E., Itkis, M.E., Ramesh, P., Berger, C., Sprinkle, M., Heer, W.A. de, and Haddon, R.C., J. Am. Chem. Soc. 131, 1336 (2009).Google Scholar
14 Riedl, C. and Starke, U., Phys. Rev. B 76, 245406 (2007).Google Scholar
15 Starke, U. and Riedl, C., J. Phys.: Condens. Matter 21, 134016 (2009).Google Scholar