Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-01T22:30:11.035Z Has data issue: false hasContentIssue false
  • English
  • Français

Hall effect measurements at low temperature of arsenic implanted into 4H-silicon carbide

Published online by Cambridge University Press:  15 March 2011

J. Senzaki ,
K. Fukuda ,
Y. Ishida ,
Y. Tanaka ,
H. Tanoue ,
N. Kobayashi ,
T. Tanaka  and
K. Arai
J. Senzaki
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
K. Fukuda
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
Y. Ishida
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
Y. Tanaka
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
H. Tanoue
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body
N. Kobayashi
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
T. Tanaka
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body R&D Association for Future Electron Devices, c/o Electrotechnical Laboratory 1204, 1-1-4, Umezono, Tsukuba, Ibaraki, 305-8568, JAPAN
K. Arai
Affiliation:
Ultra-Low Loss Power Device Technologies Research Body Electrotechnical Laboratory
Get access

Abstract

The arsenic dose dependence of electrical properties for implanted samples at 500°C and subsequently annealed at 1600°C for 30min has been investigated to derivate the activation energies of the arsenic donors in silicon carbide. Hall effect measurements were performed between 20K and 773K. Hall carrier concentration of implanted sample with high dose of 7×1015 cm−2 is independence of temperature, which indicates the formation of implanted layer with metallic conduction. For the sample with low dose of 1×1014 cm−2, the experimental Hall mobility varies directly as T3/2 below 80K and as T−3/2 above 150K. The activation energies of arsenic donors determined from the implanted sample with low dose using a least-squares fit of the charge neutrality equation are 66.8 meV for hexagonal site and 127.0 meV for cubic site, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T6.7.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Patel, R., Khemka, V., Ramungul, N., Chow, T.P., Ghezzo, M. and Kretchmer, J., Proc. of 1998 Int. Symp. Power Semiconductor Diveces & Ics, pp.387.Google Scholar
2. Chilukuri, R.K., Shenoy, P.M. and Baliga, B.J., Proc. Int. Symp. Power Semiconductor Devices & Ics, p.115.Google Scholar
3. Schorner, R., Friedrichs, P., Peters, D. and Stephani, D., IEEE ELECTRON DEVICES LETTERS, 20, 241 (1999).Google Scholar
4. Gätz, W., Schäner, A., Pensl, G., Suttrop, W., Choyke, W.J., Stein, R. and Leibenzeder, S., J. Appl. Phys., 73, 3332 (1993).Google Scholar
5. Scott, M.B., Yeo, Y.K., Hengehold, R.L. and Scofield, J.D., Inst. Phys. Conf. Ser. No 162: Ch. 13, at 25th Int. Symp. Compound Semiconductors, Nara, Japan, 763 (1998).Google Scholar
6. Senzaki, J., Fukuda, K., Imai, S., Tanaka, Y., Kobayashi, N., Tanoue, H., Okushi, H. and Arai, K., to be published in Appl. Surf. Sci.Google Scholar
7. Alexander, M.N. and Holcomb, D.F., Reviews of Modern Phys., 40, 815 (1968)Google Scholar
8. Nakashima, S. and Harima, H., Phys. Stat. Sol., (a) 162, 39 (1997)Google Scholar
9. Patrick, L., Phys. Rev. 167, 809 (1969)Google Scholar
10. Bellotti, E., Nilsson, H.E., Brennan, K.F., Pruden, P. and Trew, R., J.Appl.Phys., 87, 3864 (2000)Google Scholar
11. Pensl, G. and Choyke, W.J., Physica B, 185, 264 (1993)Google Scholar