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Guide for Low-Temperature and High-Rate Deposition of Device Quality Poly-Silicon Films By Cat-Cvd Method

Published online by Cambridge University Press:  10 February 2011

Akira Heya ,
Kazuhisa Nakata ,
Akira Izumi  and
Hideki Matsumura
Akira Heya
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, Japan, heya@jaist.ac.jp
Kazuhisa Nakata
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, Japan
Akira Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, Japan
Hideki Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology), Tatsunokuchi, Ishikawa-ken 923-1292, Japan
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Abstract

Polycrystalline silicon (poly-Si) films are obtained at temperatures lower than 400°C by catalytic chemical vapor deposition (Catalytic CVD = Cat-CVD) method, often called hot-wire CVD method. Structural properties of the Cat-CVD poly-Si films, deposited with various gas pressures, are studied by Raman scattering spectroscopy and X-ray diffraction technique. It is found that there are two recipes for obtaining device quality poly-Si films, that is, such poly-Si films are obtained at low gas pressure around 1 mTorr or less as already reported, and also at high gas pressure around 0.1 to 1 Torr. It is also found that, in addition to catalyzer temperature, the gas pressure is a key factors to obtain device quality poly-Si films at high deposition rates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 435
Copyright
Copyright © Materials Research Society 1998

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References

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