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The Growth, Steady State and Decay of the Photocarrier Population at low Temperatures

Published online by Cambridge University Press:  16 February 2011

Minh Q. Tran ,
P. Stradins  and
H. Fritzsche
Minh Q. Tran
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
P. Stradins
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
H. Fritzsche
Affiliation:
James Franck Institute, The University of Chicago, 5640 Ellis Ave., Chicago, IL 60637, USA
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Abstract

We used the transient infrared photoconductivity to measure the rise and fall of the non-equilibrium photocarrier concentration n at helium temperatures and the conditions for recombination. The growth rate of n was found to be only a few percent of the electron-hole pair generation rate G in agreement with LESR data of Street and Biegelsen. The saturation value of n is about 1017cm−3 and nearly independent of G. After turning off the generation light, the residual n requires an hour to decrease by a factor 2 but it can be made to recombine in seconds by infrared light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 431
Copyright
Copyright © Materials Research Society 1994

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References

1. Shklovskii, B.I., Fritzsche, H. and Baranovskii, S.D., Phys. Rev. Lett. 62, 2989 (1989).Google Scholar
2. Stradins, P., Tran, M.Q. and Fritzsche, H., J. Non-Cryst. Solids 164–166, 175 (1993).Google Scholar
3. Street, R. A. and Biegelsen, D. K., Solid State Commun. 44, 501 (1982).CrossRefGoogle Scholar
4. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev. B 32, 23 (1985).Google Scholar
5. Boulitrop, F., Optical Effects in Amorphous Semiconductors, edited by Taylor, P.C. and Bishop, S.G.; AIP Conf. Proc. 120, 178 (1984).Google Scholar
6. Bishop, T. E. L. and Searle, T. M., Phil. Mag. B 57, 329 (1988).Google Scholar
7. Saleh, R., Ulber, I., Fuhs, W. and Mell, H., J. Non-Cryst. Solids, 164–166, 563 (1993).CrossRefGoogle Scholar
8. Tran, M.Q., Fritzsche, H. and Stradins, P., Mat Res. Soc. Proc. 297, 195 (1993).Google Scholar