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Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

Published online by Cambridge University Press:  15 February 2011

Hee-Bog Kang ,
Kiyoshi Nakamura  and
Kazuo Ishikawa
Hee-Bog Kang
Affiliation:
Department of Electrical Communications, Faculty of Engineering, Tohoku University Aoba, Aramaki, Aoba-ku, Sendai 980, Japan
Kiyoshi Nakamura
Affiliation:
Department of Electrical Communications, Faculty of Engineering, Tohoku University Aoba, Aramaki, Aoba-ku, Sendai 980, Japan
Kazuo Ishikawa
Affiliation:
Department of Electrical Communications, Faculty of Engineering, Tohoku University Aoba, Aramaki, Aoba-ku, Sendai 980, Japan
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Abstract

Epitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 474: Symposium L – Epitaxial Oxide Thin Films III , 1997 , 395
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Herman, M.A. and Sitter, H., Molecular Beam Epitaxy. Springer-Verlag, Berlin, 1989, pp. 1–24.Google Scholar
2. Chow, P.P. in Thin Film Processes II. edited by Vossen, J.L. and Kern, W. (Academic Press, Inc., New York, 1991) pp. 133–175.Google Scholar
3. Motamedi, M.E. and White, R.M., in Semiconductor Sensors, edited by Sze, S.M. (John Wiley & Sons, Inc., New York, 1994) pp. 97–151.Google Scholar
4. Wanuga, S., Medford, T.A., and Dietz, J.P., IEEE Ultrasonics Symp., 1–6 (1965).Google Scholar
5. Onishi, S., Hirokawa, Y., Shiosaki, T., and Kawabata, A., Jpn. J. Appl. Phys., 12, 773 (1978).Google Scholar
6. Mitsuyu, T., Ono, S., and Wasa, I.C., J. Appl. Phys., 51, 2464 (1980).Google Scholar
7. Paradis, E.L. and Shuskus, A.J., Thin Solid films, 38, 131 (1976).Google Scholar
8. JCPDS File No 5–664 (1974).Google Scholar
9. Golecki, I. in Comparison of Thin film Transistor and SOI Technologies, edited by Lam, H.W. and Thompson, M.J. (Mater. Res. Soc. Symp. Proc, 33, Pittsburgh, PA, 1984) pp. 3–8.Google Scholar
10. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth, 22, 118 (1974).Google Scholar
11. Van de Pol, F.C.M., Am. Ceram. Soc. Bull, 69, 1959(1990).Google Scholar
12. Kang, H.B., Nakamura, K., Lim, S.H. and Shindo, D., unpublished results.Google Scholar