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Growth of ultra thin ZnSe nanowires

Published online by Cambridge University Press:  01 February 2011

Tai Lun Wong ,
Yuan Cai ,
Siu Keung Chan ,
Iam Keong Sou  and
Ning Wang
Tai Lun Wong
Affiliation:
phwong@ust.hk, HKUST, Physics, Kolwoon, Hong Kong
Yuan Cai
Affiliation:
caiyuan@ust.hk, HKUST, Physics, Kolwoon, Hong Kong
Siu Keung Chan
Affiliation:
gokou@ust.hk, HKUST, Physics, Kolwoon, Hong Kong
Iam Keong Sou
Affiliation:
phiksou@ust.hk, HKUST, Physics, Kolwoon, Hong Kong
Ning Wang
Affiliation:
phwang@ust.hk, HKUST, Physics, Kolwoon, Hong Kong
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Abstract

We report here the growth of ultra thin ZnSe nanowires at low temperatures by Au-catalyzed molecule beam epitaxy and structural characterization of the nanowires. ZnSe nanowires may contain a high density of stacking faults and twins from low temperature growth and show a phase change from cubic to hexagonal structures. Ultra thin ZnSe nanowires can grow at a temperature below the eutectic point, and the relationship between the growth rates and nanowire diameters is V = 1/dn + C0 (C0 is a constant and n is a fitting parameter). The growth rate of the ultra thin nanowires at low temperatures can be elucidated based on the model involving interface incorporation and diffusion, in which the catalyst is solidified, and the nanowire growth is controlled through the diffusion of atoms into the interface between catalyst and the nanowire. The growth rate of ZnSe ultra-thin nanowires has been simulated.

Keywords

nanostructurecrystal growthmolecular beam epitaxy (MBE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1144: Symposium LL – Nanowires–Systhesis, Properties, Assembly and Applications , 2008 , 1144-LL01-04
Copyright
Copyright © Materials Research Society 2009

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References

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