Hostname: page-component-76fb5796d-skm99 Total loading time: 0 Render date: 2024-04-26T13:06:22.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of The Mo5SiB2 Phase in A Mo5Si3/Mo2B Diffusion Couple

Published online by Cambridge University Press:  21 March 2011

Sungtae Kim ,
R. Sakidja ,
Z. F. Dong ,
J. H. Perepezko  and
Yeon Wook Kim
Sungtae Kim
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave, Madison, Wisconsin 53706, USA
R. Sakidja
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave, Madison, Wisconsin 53706, USA
Z. F. Dong
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave, Madison, Wisconsin 53706, USA
J. H. Perepezko
Affiliation:
Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Ave, Madison, Wisconsin 53706, USA
Yeon Wook Kim
Affiliation:
Department of Materials Science and Engineering, Keimyung University, Taegu, KOREA
Get access

Abstract

The high melting temperature and oxidation resistance of the Mo5SiB2 (T2) phase and multiphase microstructures incorporating the T2 phase in the Mo-Si-B system have motivated further studies for applications in very high temperature environments. Since the long term microstructural stability is determined by diffusional processes, diffusion couples consisting of binary boride and silicide phases have been examined in order to evaluate the kinetics of T2 phase development and the relative diffusivities controlling the kinetics. Long term annealing (500 hrs) of the Mo5Si3/Mo2B diffusion couple yields the phase sequence of Mo5Si3/Mo3Si/T2/Mo2B at 1600°C. This indicates that the T2 phase initiates and grows from the Mo2B side to a thickness of about 32μm and the Mo3Si phase initiates and grows from the Mo5Si3 side to a thickness of about 15μm. Other annealing treatments allow for an analysis of the diffusion kinetics based upon the layer thickening and composition profile measurements. To identify the crystallographic growth direction of T2 on Mo2B, a wedge shaped TEM sample with very thin leading edge was prepared. Microstructure images indicate that the growth mode of the T2 phase is columnar. There is a clear tendency for the growth of T2 to be approximately normal to c-axis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 646 , 2000 , N5.42.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nowotny, H., Dimakopoulou, E., Kudielka, H., Mh. Chem., 88, 180 (1957).Google Scholar
[2] Kim, S., Sakidja, R., Fournelle, J. and Perepezko, J. H., to be published.Google Scholar
[3] Fournelle, J. H., Donovan, J. J., Kim, S. and Perepezko, J. H., Proceedings of 2nd Conference of the International Union of Microbeam Analysis Societies (Kailua-Kona, Hawaii, Jul 9–13, 2000), pp. 425–426.Google Scholar
[4] Dayananda, M. A. and Sohn, Y. H., Metall. Mater. Trans. A, 30A, 535 (1999)Google Scholar
[5] Kim, S. and Perepezko, J. H., to be published.Google Scholar
[6] Atkinson, K., Elementary Numerical Analysis, (John Wiley & Sons, New York, 1985) pp. 256 Google Scholar
[7] Maier, K., Mehrer, H. and Rein, G., Z. Metallkde., 90, 271 (1979).Google Scholar