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Growth of Silicon-Germanium Alloys by Atmospheric-Pressure Chemical Vapor Deposition at Low Temperatures

Published online by Cambridge University Press:  22 February 2011

P. D. Agnello ,
T. O. Sedgwick ,
M. S. Goorsky ,
J. Ott ,
T. S. Kuan ,
G. Scilla  and
V. P. Kesan
P. D. Agnello
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
T. O. Sedgwick
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
M. S. Goorsky
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
J. Ott
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
T. S. Kuan
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
G. Scilla
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
V. P. Kesan
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
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Abstract

Dichlorosilanc and germane were used to grow silicon-germanium alloys at temperatures as low as 550°C at atmospheric pressure. Germanium mole fractions as high as 44% were obtained and the layers exhibit smooth surface morphology. Silicon-gcrmanium/silicon multilayers with abrupt hctero-intcrfaccs have been achieved. Cross Section Transmission Electron Microscopy, (XTEM) and High Resolution X-Ray Diffraction, (HRXRD) characterization of the hetero-interface abruptness will be presented. Recent results on two-dimensional (2-D) hole mobility structures grown by this technique will also be reported. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidcwall, which has been commonly observed in high temperature silicon growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 607
Copyright
Copyright © Materials Research Society 1991

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References

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