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Growth of SiCN Crystals Consisting of a Predominantly Carbon Nitride Network

Published online by Cambridge University Press:  10 February 2011

D. M. Bhusari ,
C. K. Chen ,
K. H. Chen ,
L. C. Chen  and
T. J. Chuang
D. M. Bhusari
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
C. K. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan.
K. H. Chen
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
L. C. Chen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan.
T. J. Chuang
Affiliation:
Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
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Abstract

We report here growth of thin films of Si-containing crystalline carbon-nitride by microwave plasma assisted CVD. The chemical composition of these films has been observed to be a strong function of the substrate temperature. A significant incorporation of Si into the CN network occurs for substrate temperatures exceeding 1000C. XPS analyses of these films indicate a multiple bonding structure between carbon and nitrogen and also indicate that a majority of the carbon atoms are tetrahedrally coordinated and covalently bonded with nitrogen. Investigations of the growth rate as a function of various deposition parameters revealed that Si substrates exhibit weight loss rather than deposition, suggesting that abstraction of Si atoms from the substrate surface by the chemically active radicals from the plasma is a dominant process. The species thus formed, i.e., the active radicals bonded with Si, appear to facilitate the subsequent reactions in the gas phase. A major achievement of this study is that there is no obvious deposition of any amorphous CN material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 693
Copyright
Copyright © Materials Research Society 1997

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