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Growth of Microcrystalline Silicon in Ultrathin Layers

Published online by Cambridge University Press:  21 February 2011

Y.-J. Wu ,
P. D. Persans ,
B. Abeles  and
S.-L. Wang
Y.-J. Wu
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy NY 12180
B. Abeles
Affiliation:
Exxon Research and Engineering Company, Annandale, NJ 08801
S.-L. Wang
Affiliation:
James Franck Institute, University of Chicago, Chicago 60637
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Abstract

We report recent studies of the crystallization of ultrathin (< 10 nm ) amorphous silicon layers clad by silicon dioxide. We observe changes in Raman scattering spectra which indicate that nanocrystalline silicon layers formed by crystallization of amorphous silicon continue to evolve structurally with further annealing. There is evidence for significant strain in crystallized material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 164: Symposium H – Materials Issues in Microcrystalline Semiconductors , 1989 , 217
Copyright
Copyright © Materials Research Society 1990

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References

1. Abeles, B. and Tiedje, T., Phys. Rev Lett. 51, 2003, (1983).Google Scholar
2. Kakalios, J., Fritzsche, H., Ibaraki, N. and Ovshinsky, S. R., J. Non- Cryst. Sol. 66, 339 (1983).Google Scholar
3. Persans, P. D., Ruppert, A. F. and Abeles, B., J. Non-Cryst. Sol. 102, 130, (1988).Google Scholar
4. Persans, P.D., Ruppert, A.F. and Abeles, B., in: Multilayers: Synthesis, Properties and Non-electronic Applications, eds, Barbee, T., Greer, L. and Spaepen, F., (Mat. Res. Soc., Pittsburgh, 1988)Google Scholar
5. Roth, J. A., Kokorwoski, S. A., Olson, G., Hess, L., in Laser and Electron Beam Interactions with Solids, ed. Appleton, B. and Celler, G., (Elsevier, Amsterdam, 1982), p. 169.Google Scholar
6. Roxlo, C. and Abeles, B., Phys. Rev.B, 34, 2422, 1986 Google Scholar
7. Johanson, R., Ph.D. Thesis, University of Chicago.Google Scholar
8. Gonzales-Hernandez, J. and Tsu, R., Appl. Phys. Lett., Vol. 42, No. 1, 90 1983 Google Scholar
9. Ugur, H., Johanson, R., and Fritzsche, H., in Tetrahedrally Bonded Amorphous Semiconductors, ed. Adler, D. and Fritzsche, H., (Plenum, New York, 1985), p. 425.Google Scholar
10. Honma, I., Komiyama, H. and Tanaka, K., J. Appl. Phys, 66, 1170, (1989).Google Scholar
11. Williams, C.V.M., Bittar, A., Trodahl, H. J., J. Appl. Phys., in press.Google Scholar
12. Iqbal, Z. and Veprek, S., J. Phys. C, 15, 377, (1982).Google Scholar
13. Richter, H., Wang, Z. and Ley, L., Sol. St. Commun., 39, 625, (1981).Google Scholar