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Growth of MgO by Metal-Organic Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

Feng Niu ,
Brent.H. Hoerman  and
Bruce.W. Wessels
Feng Niu
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 Draft, 15 November 1999
Brent.H. Hoerman
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 Draft, 15 November 1999
Bruce.W. Wessels
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208 Draft, 15 November 1999
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Abstract

MgO thin films were deposited on (100) Si substrates by metal-organic molecular beam epitaxy (MOMBE). Magnesium acetylacetonate was used as the precursor and an oxygen RF plasma was used as the oxidant. The films were characterized by a combination of transmission electron microscopy, Auger spectrometry and atomic force microscopy. Analyses indicate that the films directly deposited on Si substrates are stoichiometric, phase-pure, polycrystalline MgO with a [100] texture. Carbon contamination of the films resulting from precursor decomposition was not observed within detection limits. Furthermore, the growth rate of MgO has been systematically investigated as a function of growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 606: Symposium NN – Chemical Processing of Dielectrics, Insulators & Electronic Ceramics , 1999 , 45
Copyright
Copyright © Materials Research Society 2000

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