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Growth of Laser Ablated YBa2Cu3O7−δ Films as Examined by Rheed and Scanning Tunneling Microscopy

Published online by Cambridge University Press:  01 January 1992

Stephen E. Russek
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
Alexana Roshko
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
Steven C. Sanders
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
David A. Rudman
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
J. W. Ekin
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
John Moreland
Affiliation:
Electromagnetic Technology Division, National Institute of Standards and Technology, Boulder, Colorado, 80303
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Abstract

Using scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) we have examined the growth morphology, surface structure, and surface degradation of laser ablated YBa2Cu3O7−δ thin films. Films from 5 nm to ltm thick were studied. The films were deposited on MgO and LaAlO3 substrates using two different excimer laser ablation systems. Both island nucleated and spiral growth morphologies were observed depending on the substrate material and deposition rate used. The initial growth mechanism observed for a 5–10 nm thick film is replicated through different growth layers up to thicknesses of 200 run. Beyond 200 rnm, the films show some a-axis grains and other outgrowths. The thinnest films (5–10 nm) show considerable surface roughness on the order of 3–4 nm. For both growth mechanisms the ledge width remains approximately constant (∼ 30 nm) and the surface roughness increases as the film thickness increases. The films with spiral growth have streaked RHEED patterns despite having considerable surface roughness, while the films with island growth have more of a three dimensional diffraction pattern. RHEED patterns were obtained after the film surfaces were degraded by exposure to air, KOH developer, a Br-methanol etch, and a shallow ion mill. Exposure to air and KOH developer caused only moderate degradation of the RHEED pattern whereas a shallow (I nm deep) 300 V ion mill completely destroyed the RHEED pattern.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Hawley, M., Raistrick, I. D., Berry, J. G., and Houlton, R. J., Science 251, 1587 (1991).Google Scholar
2. Schlom, D.G., Anselmetti, D., Bednorz, J. G., Broom, R., Catana, A., Fry, T., Gerber, Ch., Guntherodt, H.-J., Lang, H. P., and Mannhart, J., Z. Phys. B 86, 163 (1991).Google Scholar
3. Moreland, John, Rice, Paul, Russek, S. E., Jeanneret, B., Roshko, A., Ono, R. H., and Rudman, D. A., Appl. Phys. Lett. 59, 3039 (1991).Google Scholar
4. Roshko, A., Moreland, J., Rudman, D. A., Vale, L.R., Russek, S. E., and Jeanneret, B., unpublished.Google Scholar
5. Terashima, T., Bando, Y., Iijima, K., Yamamoto, K., Hirata, K., Hayashi, K., Kamigami, K., and Terauchi, H., Phys. Rev. Lett. 65, 2684 (1990).Google Scholar
6. Baudenbacher, F., Karl, H., Berberich, P., Kinder, H., in Science and Technology of Thin Film Superconductors 2, edited by McConnell, R. D. and Noufi, R. (Plenum, New York, 1990), p. 351.Google Scholar
7. Chandrasekhar, N., Achutharaman, V. S., Agrawal, V., Goldman, A. M., Phys. Rev. B 46, 8565 (1992).Google Scholar
8. Chang, C. C., Hedge, M. S., Wu, X. D., Duttat, B., Inam, A., Venkatesan, T., Wilkens, B. J., and Wachtman, J. B., Appl. Phys. Lett. 55, 1680 (1989).Google Scholar
9.Low-temperature STM and room-temperature AFM measurements give step height values closer to 1.4 nm although the calibration and interpretation of these measurements are not sufficient at present to determine if this is a real distortion of the crystal lattice from the 1.17 nm bulk c-axis lattice constant. Room temperature STM images, which are contours of constant tunneling conductance, show a greatly distorted terrace structure due to large variations of the electronic properties along the surface and therefore do not accurately represent the actual surface topography.Google Scholar