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Growth of Large Diameter Silicon-Germanium Monocrystals

Published online by Cambridge University Press:  15 March 2011

Richard H. Deitch ,
Stephen H. Jones  and
Thomas G. Digges Jr.
Richard H. Deitch
Affiliation:
Virginia Semiconductor, Inc., 1501 Powhatan Street, Fredericksburg, VA 22401, U.S.A.
Stephen H. Jones
Affiliation:
Virginia Semiconductor, Inc., 1501 Powhatan Street, Fredericksburg, VA 22401, U.S.A.
Thomas G. Digges Jr.
Affiliation:
Virginia Semiconductor, Inc., 1501 Powhatan Street, Fredericksburg, VA 22401, U.S.A.
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Abstract

Si-Ge monocrystals up to 50 mm diameter and up to 17 at% germanium were grown using a modified Czochralski technique. Pre-grown large diameter silicon seeds with various crystallographic orientations were used as templates for the alloy solidification to reduce cap crystallization time and insure monocrystallinity at desired diameters. Discussed are the influences that seed preparation, crystal growing parameters, and post-growth processing have on the material that was produced using this new technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 587: Symposium O – Substrate Engineering - Paving the Way to Epitaxy , 1999 , O5.7
Copyright
Copyright © Materials Research Society 2000

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