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Growth of InGaN Films by MBE at the Growth Temperature of GaN

Published online by Cambridge University Press:  21 February 2011

R. Singh  and
T.D. Moustakas
R. Singh
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering and Center for Photonics Research, Boston University, Boston MA 02215
T.D. Moustakas
Affiliation:
Molecular Beam Epitaxy Laboratory, Department of Electrical Engineering and Center for Photonics Research, Boston University, Boston MA 02215
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Abstract

We report the growth of InGaN alloys over practically the entire composition range at the growth temperature of GaN (700–800 °C) by MBE. We found that when the grown films are thick (> 0.3 μm), incorporation of more than about 30% indium results in phase separation of InN, which is consistent with spinodal decomposition. On the other hand we discovered that such phase separation is absent in thin InGaN films ( < 600Å) grown as GaN/InGaN/GaN heterostructures. In such configurations we were able to incorporate up to 81% In, which is the highest yet reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 163
Copyright
Copyright © Materials Research Society 1996

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References

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