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Growth of Highly Oriented CdsXSe1.X Thin Films By Uv Laser Evaporation Deposition

Published online by Cambridge University Press:  26 February 2011

H.S. Kwok ,
P. Mattocks ,
D.T. Shaw ,
L. Shi ,
X.W. Wang ,
S. Witanachchi ,
Q.Y. Ying  and
J.P. Zheng
H.S. Kwok
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, a. Department of Electrical and Computer Engineering
P. Mattocks
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, b. Department of Physics and Astronomy
D.T. Shaw
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, a. Department of Electrical and Computer Engineering
L. Shi
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, b. Department of Physics and Astronomy
X.W. Wang
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, a. Department of Electrical and Computer Engineering
S. Witanachchi
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, a. Department of Electrical and Computer Engineering
Q.Y. Ying
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, b. Department of Physics and Astronomy
J.P. Zheng
Affiliation:
State University of New York at Buffalo, Bonner Hall, Amherst, NY 14260, a. Department of Electrical and Computer Engineering
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Abstract

CdSxSe1−x thin films have been grown by uv laser-evaporation deposition in a clean vacuum environment. The films have their c-axis perpendicular to the surface, and are optically smooth and homogeneous. These high quality films should be useful in nonlinear integrated optics applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 337
Copyright
Copyright © Materials Research Society 1998

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References

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