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Growth of Epitaxial ZnS Films by Pulsed-Laser Ablation

Published online by Cambridge University Press:  25 February 2011

J. W. McCamy ,
D. H. Lowndes ,
J. D. Budai ,
B. C. Chakoumakos  and
R. A. Zuhr
J. W. McCamy
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, TN 37996–1200
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
B. C. Chakoumakos
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
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Abstract

Pulsed KrF (248nm) laser ablation of a polycrystailine ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(OOl), GaAs(111), and GaP(OOl). The films were grown at temperatures of 150–450°C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is ∼6 × 1010 cm-3, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 243
Copyright
Copyright © Materials Research Society 1992

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References

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